SINGLE POINT

Brand Owner (click to sort) Address Description
SINGLEPOINT SINGELPOINT 1601 EXPOSITION BLVD. SACRAMENTO CA 95815 SINGLE POINT;underwriting disability insurance, underwriting health insurance, underwriting workers compensation insurance, insurance administration, insurance brokerage, insurance claims administration and insurance claims processing;health care in the nature of a health maintenance organization;
SINGLEPOINT Zoot Enterprises, Inc. 555 Zoot Enterprises Lane Bozeman MT 59718 SINGLE POINT;Application service provider featuring software in the lending field for use in evaluating credit applications, acquiring third party data, performing risk analysis, conducting identity verification, and conducting fraud investigation, resulting in statistically valid, real-time credit decision;
SINGLEPOINT CURVATURE, INC. 2810 Coliseum Centre Drive, Suite 600 Charlotte NC 28217 SINGLE POINT;Inventory management in the field of tracking information technology hardware and software of others; industrial asset management, namely, assessment, tracking and reporting on industrial assets of others;
SINGLEPOINT CalFarm Life Insurance Company 1601 Exposition Boulevard Sacramento CA 95815 SINGLE POINT;underwriting disability insurance, underwriting health insurance, underwriting workers compensation insurance, insurance administration, insurance brokerage, insurance claims administration and insurance claims processing;health care in the nature of a health maintenance organization;
SINGLEPOINT SMS Systems Maintenance Services, Inc. 455 River Road Hudson MA 01749 SINGLE POINT;Inventory management in the field of tracking information technology hardware and software of others; industrial asset management, namely, assessment, tracking and reporting on industrial assets of others;
 

Where the owner name is not linked, that owner no longer owns the brand

    
Technical Examples
  1. The present invention is a method of manufacturing a silicon single crystal by Czochralski method without performing Dash Necking method, wherein a temperature variation at a surface of a silicon melt is kept at ±5° C. or less at least for a period from a point of bringing the tip end of a seed crystal into contact with the silicon melt to a point of shifting to pull the single crystal. Thereby, in a method of growing a silicon single crystal by Czochralski method without using Dash Necking method, a success ratio of growing a single crystal free from dislocation can be increased, at the same time a heavy silicon single crystal having a large diameter in which a diameter of a constant diameter portion is over 200 mm can be grown even in the case of growing a silicon single crystal having a crystal orientation of <110>.