TRANSISTORS ELECTRONIC
| Brand | Owner | Address | Description |
|---|---|---|---|
| COOLDP | INFINEON TECHNOLOGIES AUSTRIA AG | Siemensstrasse 2 Villach 9500 Austria | Transistors electronic; semiconductors; semiconductor apparatus; electrical circuits and circuit boards; electric and electronic switches; electric and electronic controls; transformers (electricity, electronics); electronic and electronic converters; electric and electronic circuits; ballasts for electrical lighting fittings; lighting ballasts; data processing apparatus; microcontrollers; microprocessors; regulated power supply apparatus; voltage regulators for electric power; electric power controllers; electric control apparatus; peripherals adapted for use with computers; wired telephones; wireless telephones; television apparatus; image recording and reproduction apparatus; video recording and playback apparatus; cameras; computer software; firmware; software for controlling and regulating electronic components for power supply;COOL DP;Design and development of chips (integrated circuits); design and development of computer hardware and software; installation of firmware; design and development of firmware; |
Where the owner name is not linked, that owner no longer owns the brand |
Technical Examples
- In electronic displays or imaging units, the control of pixels is achieved by an array of transistors. These transistors are in a thin film form and arranged in a two-dimensional configuration to form switching circuits, driving circuits or even read-out circuits. In this invention, thin film transistors and circuits with indium oxide-based channel layers are provided. These thin film transistors and circuits may be fabricated at low temperatures on various substrates and with high charge carrier mobilities. In addition to conventional rigid substrates, the present thin film transistors and circuits are particularly suited for the fabrication on flexible and transparent substrates for electronic display and imaging applications. Methods for the fabrication of the thin film transistors with indium oxide-based channels are provided.