SEMICONDUCTOR SILICON WAFERS

Brand Owner (click to sort) Address Description
EP-NANA Shin-Etsu Handotai Co., Ltd. 2-6-2, Ohtemachi, Chiyoda-ku Tokyo Japan Semiconductor silicon wafers, semiconductor silicon ingots;Applicant submits that NANA is a transliteration and means seven (7) in the Japanese language.;
EP-NANA Shin-Etsu Handotai Co., Ltd. 2-6-2, Ohtemachi, Chiyoda-ku Tokyo Japan Semiconductor silicon wafers; semiconductor silicon ingots;The English translation of NANA in the mark is seven.;
EP-NANA Shin-Etsu Handotai Co., Ltd. 2-6-2, Ohtemachi, Chiyoda-ku Tokyo Japan Semiconductor silicon wafers; Semiconductor silicon ingots sold as an integral component of semiconductor wafers;The English translation of NANA in the mark is seven.;
IG-NANA Shin-Etsu Handotai Co., Ltd. 2-6-2, Ohtemachi, Chiyoda-ku Tokyo Japan Semiconductor silicon wafers; semiconductor silicon ingots;The English translation of NANA is seven.;
IG-NANA Shin-Etsu Handotai Co., Ltd. 2-6-2, Ohtemachi, Chiyoda-ku Tokyo Japan Semiconductor silicon wafers; Semiconductor silicon ingots sold as an integral component of semiconductor wafers;The English translation of NANA in the mark is seven.;
KUP Shin-Etsu Handotai Co., Ltd. 2-6-2, Ohtemachi, Chiyoda-ku Tokyo Japan Semiconductor silicon wafers; semiconductor silicon ingots;CUP; The wording KUP has no meaning in a foreign language.;
NANA Shin-Etsu Handotai Co., Ltd. 2-6-2, Ohtemachi, Chiyoda-ku Tokyo Japan Semiconductor silicon wafers; semiconductor silicon ingots;The English translation of NANA in the mark is seven.;
 

Where the owner name is not linked, that owner no longer owns the brand

    
Technical Examples
  1. A process for producing doped semiconductor wafers from silicon, which contain an electrically active dopant, such as boron, phosphorus, arsenic or antimony, optionally are additionally doped with germanium and have a defined thermal conductivity, involves producing a single crystal from silicon and processing further to form semiconductor wafers, the thermal conductivity being established by selecting a concentration of the electrically active dopant and optionally a concentration of germanium. Semiconductor wafers produced from silicon by the process have specific properties with regard to thermal conductivity and resistivity.