SEMICONDUCTOR MEMORIES

Brand	Owner (click to sort)	Address	Description
3D-BICS	KABUSHIKI KAISHA TOSHIBA	1-1, Shibaura 1-chome, Minato-ku Tokyo 105-8001 Japan	Semiconductor memories;
BICS FLASH	KABUSHIKI KAISHA TOSHIBA	1-1, Shibaura 1-chome, Minato-ku Tokyo 105-8001 Japan	Semiconductor memories;FLASH;
N-FLASH	Nanosys, Inc.	233 South Hillview Drive Milpitas CA 95035	semiconductor memories; computer sub-system memory components, namely, computer memory chips, cells, modules, arrays and control circuitry, cache, multiplexers, floating gate structures, dielectric materials, capacitors, transistors, and charge pumps; nanomaterials, namely, quantum dots, nanoscale coatings, nanowires, nanoribbons, nanorods, and nanotubes, for use in memory applications;NANOSYS-FLASH;Licensing of intellectual property and patented technology to others;
N-GATE	Nanosys, Inc.	233 South Hillview Drive Milpitas CA 95035	semiconductor memories; computer sub-system memory components, namely, computer memory chips, cells, modules, arrays and control circuitry, cache, multiplexers, floating gate structures, dielectric materials, capacitors, transistors, and charge pumps; nanomaterials, namely, quantum dots, nanoscale coatings, nanowires, nanoribbons, nanorods, and nanotubes, for use in memory applications;Licensing of intellectual property and patented technology to others;
N-MEMORY	Nanosys, Inc.	233 South Hillview Drive Milpitas CA 95035	semiconductor memories; computer sub-system memory components, namely, computer memory chips, cells, modules, arrays and control circuitry, cache, multiplexers, floating gate structures, dielectric materials, capacitors, transistors, and charge pumps; nanomaterials, namely, quantum dots, nanoscale coatings, nanowires, nanoribbons, nanorods, and nanotubes, for use in memory applications;Licensing of intellectual property and patented technology to others;

NANOS	Nanosys, Inc.	233 South Hillview Drive Milpitas CA 95035	semiconductor memories, computer sub-system memory components such as computer memory chips, nanomaterials; licensing of intellectual property and patented technology to others;
QDM	Nanosys, Inc.	233 South Hillview Drive Milpitas CA 95035	semiconductor memories; computer sub-system memory components, namely, computer memory chips, cells, modules, arrays and control circuitry, cache, multiplexers, floating gate structures, dielectric materials, capacitors, transistors, and charge pumps; nanomaterials, namely, quantum dots, nanoscale coatings, nanowires, nanoribbons, nanorods, and nanotubes, for use in memory applications;Licensing of intellectual property and patented technology to others;
QDM	Nanosys, Inc.	233 South Hillview Drive Milpitas CA 95035	semiconductor memories; computer sub-system memory components, namely, computer memory chips, cells, modules, arrays and control circuitry, cache, multiplexers, floating gate structures, dielectric materials, capacitors, transistors, and charge pumps; nanomaterials, namely, quantum dots, nanoscale coatings, nanowires, nanoribbons, nanorods, and nanotubes, for use in memory applications;
SYNCVSRAM	SEIKO EPSON KABUSHIKI KAISHA	1 6, Shinjuku 4 chome, Shinjuku ku Tokyo 160-8801 Japan	Semiconductor memories, semiconductor integrated circuit memory boards; cellular phones;
T'N'ANOS	Nanosys, Inc.	233 South Hillview Drive Milpitas CA 95035	semiconductor memories, computer sub-system memory components such as computer memory chips, nanomaterials; licensing of intellectual property and patented technology to others;
T'N'NOS	Nanosys, Inc.	233 South Hillview Drive Milpitas CA 95035	semiconductor memories, computer sub-system memory components such as computer memory chips, nanomaterials; licensing of intellectual property and patented technology to others;
XL-FLASH	KIOXIA CORPORATION	1-21, Shibaura 3-chome, Minato-ku Tokyo 108-0023 Japan	Semiconductor memories; solid state drives;In the statement, line 9, 08-13-2028 should be deleted, and 08-03-2028 should be inserted.;
	Where the owner name is not linked, that owner no longer owns the brand

Technical Examples

Circuits, methods, and apparatus that provide integrated circuits having memories with multiple sizes. The memories may be dedicated embedded memories, or they may be distributed memories formed using memories or lookup tables in logic elements or other appropriate circuits. Configuration bits not needed by logic elements used for distributed memories can be used for data storage as well. These various memories may be combined or otherwise linked or chained together in different combinations to form larger memories of varying sizes.