QUANTUM DOTS

Brand Owner (click to sort) Address Description
CONNEO E. I. DU PONT DE NEMOURS AND COMPANY 974 Centre Road Wilmington DE 19805 Quantum dots, namely, crystalline semi-conductor material; ELECTRONIC DISPLAY INTERFACES; ELECTRONIC APPARATUS, namely, PLASMA DISPLAY PANELS, ELECTRONIC LIQUID CRYSTAL DISPLAY (LCD) PANELS AND SCREENS; ORGANIC LIGHT EMITTING DIODES (OLEDS);COATINGS IN THE NATURE OF POLYMER SOLUTIONS FOR USE IN THE MANUFACTURE OF LIQUID CRYSTAL DISPLAYS;Unprocessed acrylic resins; unprocessed silicone resins; CHEMICAL PRODUCTS FOR INDUSTRIAL USE, NAMELY, LIQUID CRYSTALS FOR USE IN THE MANUFACTURE OF LIQUID CRYSTAL DISPLAY (LCD) DEVICES AND INSTRUMENTS; CHEMICAL SLURRY FOR POLISHING SEMICONDUCTORS AND MECHANICAL ELECTRONIC SUBSTRATES;
CONNEO DuPont Electronics Inc. 974 CENTRE ROAD WILMINGTON DE 19805 Quantum dots, namely, crystalline semi-conductor material; Electronic apparatus, namely, plasma display panels, liquid crystal display (LCD) panels and liquid crystal display (LCD) large screen displays; Electronic display interface; Organic light emitting diodes (OLEDs);Coatings in the nature of polymers solutions for use in the manufacture of liquid crystal displays;Unprocessed acrylic resins; Unprocessed silicone resins; Chemical products for use in the manufacture of liquid crystal displays, namely, plasma display panels, liquid crystal display (LCD) panels and liquid crystal display (LCD) large screen displays; Chemical slurries for polishing semiconductors;
EVIDOT EVIDENT TECHNOLOGIES, INC. 65 First St. Troy NY 12180 Quantum dots; Semiconductor nanocrystals for use in connection with optical and opto electronic applications;
HEATWAVE NANOCO TECHNOLOGIES LTD. 46 GRAFTON STREET MANCHESTER M139NT United Kingdom Quantum dots, namely, crystalline semi-conductor material;HEAT WAVE;
HYPERION Nanosys, Inc. 233 South Hillview Drive Milpitas CA 95035 Quantum dots, namely, crystalline semiconductor material for use in consumer electronics;
NANOCO NANOCO TECHNOLOGIES LIMITED 48 Grafton Street Manchester M13 9XX United Kingdom quantum dots, namely, crystalline particles of a semi-conductor;In the statement, Column 1, line 2, Corporation should be deleted, and Private Limited Company should be inserted.;chemical preparations, in the nature of nanocrystalline compounds having optical, luminescent or electronic properties for use in the manufacture of quantum dots;
QDOG Nanosys, Inc. 233 South Hillview Drive Milpitas CA 95035 Quantum dots, namely, crystalline semiconductor nanocrystal materials for use in consumer electronics;Q DOG;
TREVISTA THE DOW CHEMICAL COMPANY 2211 H.H. Dow Way Midland MI 48674 quantum dots, namely, crystaline semi-conductor material for use in electronic displays;
TREVISTA ROHM AND HAAS ELECTRONIC MATERIALS 455 FOREST STREET MARLBOROUGH MA 01752 Quantum dots, namely, crystaline semi-conductor material for use in electronic displays;
TRUEQ Nanosys, Inc. 233 South Hillview Drive Milpitas CA 95035 Quantum dots, namely, crystalline semi-conductor material for use in consumer electronics, and video, television, touchscreen, tablet, phone, laptop, and computer display monitors;TRUE Q;
UBIQD UBIQUITOUS QUANTUM DOTS UbiQD 100 Entrada Drive Los Alamos NM 87544 Quantum dots, namely, crystalline semi-conductor material;QUANTUM DOTS;
VIVO DOTS NANOCO TECHNOLOIGES LTD. 46 GRAFTON STREET MANCHESTER M139NT United Kingdom Quantum dots, namely, crystalline semi-conductor material;The English translation of VIVO in the mark is alive or living.;
VIVODOTS NANOCO TECHNOLOGIES LTD. 46 GRAFTON STREET MANCHESTER M139NT United Kingdom Quantum dots, namely, crystalline semi-conductor material;VIVO DOTS;
 

Where the owner name is not linked, that owner no longer owns the brand

    
Technical Examples
  1. A method of forming the active region of an optoelectronic device incorporating semiconductor quantum dots whose ground state emission occurs at wavelengths beyond 1350 nm at a temperature of substantially 293 K is provided by forming a first layer of quantum dots covered by a spacer layer with strained areas extending there through. The spacer layer then forms a template upon which quantum dots of an active layer may be formed with a surface with a surface density and formation that is influenced by the underlying first layer of quantum dots. This allows a choice of growth parameters more favourable to the formation of quantum dots in the active layer emitting at long wavelengths with a narrow inhomogeneous broadening. As an example, the active layer of quantum dots may be formed at a lower temperature than the first layer of quantum dots. The quantum dots of the active layer are then subject to less intermixing with the surrounding spacer and capping layers, and can also preserve a more strain-relaxed state, which results in a longer wavelength emission with a narrower inhomogeneous broadening. This method is particularly well suited to the growth of the active region of an optoelectronic device on a GaAs substrate.