OPTICAL DISTRIBUTION FIELDS

Brand Owner Address Description
INONE Hexatronic Group AB Sofierogatan 3 A GÖTEBORG 41251 Sweden Optical distribution fields, including fiber optical cables, namely, optical distribution frames and fiber optical cables; joint closures for fiber optical cables and optical distribution fields, namely, fiber optic couplings in termination boxes and optical distribution frames; connectors in the nature of fiber optic connectors; optical cables; fiber optic signal cables for IT and telecommunication; micro optical cables, nano optical cables, connection cables; cables for installation in duct system, namely, telecommunication cables; hybrid cables, namely, hybrid fiber optic and DC power telecommunication cables; cables for transmission of data; cables for optical signal transmission; patch cords, namely, fiber optical extension cords; electrical fiber access terminal boxes; metal cabinets specially adapted to protect telecommunications equipment in the nature of fiber optic cables, namely, fiber splicing and DC power termination cabinets; junction boxes in the nature of fiber splicing boxes; electrical termination boxes in the nature of fiber and DC power termination boxes; communication hubs in the nature of fiber distribution hubs; fiber optics; fiber optics, namely, fiber optical adapters; fiber optical cables; fiber optical couplings; coupling sleeves for fiber optic cables; electrical connector housings for fiber optical cables; fiber optical control panels; junction boxes for housing of cable joints;I NONE IN ONE;
 

Where the owner name is not linked, that owner no longer owns the brand

    
Technical Examples
  1. A present invention provides real-time temperature and power mapping of fully operating electronic devices. The method utilizes infrared (IR) temperature imaging, while an IR-transparent coolant flows through a specially designed cell directly over the electronic device. In order to determine the chip power distributions the individual temperature fields for each heat source of a given power and size on the chip (as realized by a scanning focused laser beam) are measured under the same cooling conditions. Then the measured chip temperature distribution is represented as a superposition of the temperature fields of these individual heat sources and the corresponding power distribution is calculated with a set of linear equations.