EDITORIALS WRITTEN BY THEMSELVES OR

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G GRUDGR DOING BAD FOR GOOD GRUDGR, LLC 5419 Hollywood Blvd., Suite C829
Los Angeles CA 90027
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GRUDGR GRUDGR, LLC 5419 Hollywood Blvd., Suite C829
Los Angeles CA 90027
Providing online journals, blogs featuring commentary ...
 

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Technical Examples
  1. A thermally written magnetic memory device is disclosed. The thermally written magnetic memory device includes a plurality of thermally written magnetic tunnel junction devices. Each thermally written magnetic tunnel junction device includes a super-paramagnetically stable data layer. The data layer includes a high coercivity at a read temperature such that a bit of data previously written to the data layer at a higher write temperature can be read from the data layer at the read temperature. The data layer has a low coercivity at the higher write temperature and data is written to the data layer at the higher write temperature. Therefore, at the lower read temperature, the thermally written magnetic memory device is a read only non-volatile memory and the data stored therein can be read many times but new data cannot be written to the data layer at the read temperature.