BUG BAND
| Brand | Owner (click to sort) | Address | Description |
|---|---|---|---|
| BUGBAND | Su, Yin | No. 172, Niutouzhaiwai, Qingyangshan Village, Nanjing Town, Puning City, Guangdong 515354 China | BUG BAND;Argan oil for cosmetic purposes; Body scrub; Body and beauty care cosmetics; Cosmetic oils; Essential oils for personal use; Essential oils for use in aromatherapy; Hair conditioners; Hair oils; Lotions for strengthening the nails; Make-up remover; Non-medicated preparations all for the care of skin, hair and scalp; Non-medicated skin care preparations, namely, creams, lotions, gels, toners, cleaners and peels; Non-medicated skin, hair, nail care preparations; Skin moisturizer; Skin moisturizers used as cosmetics; Sun screen preparations; Suntan oils for cosmetic purposes; |
| BUGBAND | Su, Yin | No. 172, Niutouzhaiwai, Qingyangshan Village, Nanjing Town, Puning City, Guangdong 515354 China | BUG BAND;Electric devices for attracting and killing insects; Fly catchers; Fly swatters; Fly traps; Insect collecting cages; Insect traps; Mouse traps; Plug-in diffusers for mosquito repellents; Rat traps; |
| BUGBAND | Su, Yin | No. 172, Niutouzhaiwai, Qingyangshan Village, Nanjing Town, Puning City, Guangdong 515354 China | BUG BAND;Baby bottles; Cups adapted for feeding babies and children; Ear picks; Ear plugs for soundproofing; Glucose meters; Massage apparatus; Massaging apparatus for personal use; Nasal irrigation vessel; Otoscopes; Portable hand-held urinals; Sex dolls; Therapeutic white noise machines; |
Where the owner name is not linked, that owner no longer owns the brand |
Technical Examples
- A semiconductor device exhibiting interband tunneling with a first layer with a first conduction band edge with an energy above a first valence band edge, with the difference a first band-gap. A second layer with second conduction band edge with an energy above a second valence band edge, with the difference a second band-gap, and the second layer formed permitting electron carrier tunneling transport. The second layer is between the first and a third layer, with the difference between the third valence band edge and the third conduction band edge a third band-gap. A Fermi level is nearer the first conduction band edge than the first valence band edge. The second valence band edge is beneath the first conduction band edge. The second conduction band edge is above the third valence band edge. The Fermi level is nearer the third valence band edge than to the third conduction band edge.