BLOCKING DUMMIES

Brand Owner (click to sort) Address Description
A.PAD ROGERS ATHLETIC COMPANY, INCORPORATED 3766 W. LUDINGTON DRIVE
FARWELL MI 48622
BLOCKING DUMMIES, SHIELDS AND SLED PADS ...
BLASTRONAUTS Jolly Blast Productions LLC 4108 Horatio Court
Olney MD 20832
Toys and sporting goods, action figures, ...
BUNDAHEAD James Popp 633 East Center Avenue
Mooresville NC 28115
Sporting goods and sports, fitness, athletic ...
COLLISION KING Global Sports Innovation Ltd. 22 Ellwyn Terrace
GB
Galashiels Selkirksh
United Kingdom
Exercise equipment for rugby training, ruck ...
CONTACT KID Contact Kid, Inc. 3216 Oakwood Drive
Thunderbolt GA 31404
Tackling and blocking dummies
D.PAD ROGERS ATHLETIC COMPANY INCORPORATED 3766 W. LUDINGTON DRIVE
FARWELL MI 48622
BLOCKING DUMMIES, SHIELDS AND SLED PADS ...
KNOCKOUT De La Vega, David 582-30th St.
Manhattan Beach CA 90266
Sports equipment for mixed martial arts, ...
ROGERS T 02 BAG O. DAVID ROGERS 3942 W. LUDINGTON DRIVE
FARWELL MI 48622
BLOCKING DUMMIES, SHIELDS AND SLED PADS ...
S.A. GEAR TSA Stores, Inc. 1050 West Hampden Avenue
Englewood CO 80110
fitness balls, fitness machines and equipment, ...
T ZOID Mizuno Kabushiki Kaisha Chuo-ku, Osaka-shi
1-23, Kitahama 4-chome
Osaka, 541-8538
Japan
golf clubs, [ golf tees, golf ...
TAG.ALONG ROGERS ATHLETIC COMPANY, INCORPOATED 3766 W. LUDINGTON DRIVE
FARWELL MI 48622
BLOCKING DUMMIES, SHIELDS AND SLED PADS ...
 

Where the owner name is not linked, that owner no longer owns the brand

   
Technical Examples
  1. A photolithography and etch process sequence includes a photomask having a pattern with compensation features that alleviate patterning variations due to the proximity effect and depth of focus concerns during photolithography. The compensation features may be disposed near isolated or outermost lines of a device pattern. A photoresist pattern is formed to include the compensation features and the pattern etched to form a corresponding etched pattern including the compensation features. After etching, a protection material is formed over the layer and a trim mask is used to form a further photoresist pattern over the protection material. A subsequent etching pattern etches the protection material and removes the compensation features and results in the device lines being formed unaffected by proximity effects. Flare dummies may additionally be added to the mask pattern to increase pattern density and assist in endpoint detection. Flare dummies, like the compensation features, are subsequently removed by a photolithography and etching process sequence.