ARCHE TYPE

Brand Owner (click to sort) Address Description
ARCHETYPE DIAGEO CHATEAU & ESTATE WINES COMPANY 240 Gateway Road West Napa CA 94558 ARCHE TYPE;Wines;
ARCHETYPE HLI SOLUTIONS, INC. 1975 Noble Road East Cleveland OH 44112 ARCHE TYPE;Lighting fixtures;
ARCHETYPE KRETEK INTERNATIONAL, INC. 5449 Endeavour Court Moorpark CA 93021 ARCHE TYPE;Cigars; cigarillos;
ARCHETYPE Frank Leba 11350 S Riverwood Rd Portland OR 97219 ARCHE TYPE;Jackets; Motorcycle gloves; Motorcycle jackets; Motorcycle rain suits; Pants; Rain boots; Rain coats; Rain hats; Rain jackets; Rain slickers; Rain suits; Rain trousers; Rain wear; Ski and snowboard shoes and parts thereof; Ski bibs; Ski boot bags; Ski gloves; Ski jackets; Ski pants; Ski suits; Ski suits for competition; Ski trousers; Ski wear; Suit coats; Suits; Sweaters; Bomber jackets; Boots for motorcycling; Camouflage pants; Cargo pants; Crew neck sweaters; Denims; Down jackets; Flight suits; Heavy jackets; Hunting pants; Leather pants; Long jackets; Men's suits; Men's suits, women's suits; Mock turtle-neck sweaters; Motorcycle jackets; Motorcycle rain suits; Padded jackets; Rain suits; Reversible jackets; Shell jackets; Ski pants; Ski suits; Snow suits; Snowboard pants; Sports pants; Stretch pants; Sweat jackets; Turtleneck sweaters; V-neck sweaters; Wind pants;
ARCHETYPE Archetype Associates Incorporated Suite 15 315 8th Avenue Brooklyn NY 11215 ARCHE TYPE;consulting services in the fields of architecture, design, and the decorative arts;
THE ARCHETYPE HUBBELL LIGHTING, INC. 40 Waterview Drive Shelton CT 06484 ARCHE-TYPE;LUMINAIRE;
THE ARCHETYPE KIM LIGHTING, INC. 16555 EAST GALE AVENUE CITY OF INDUSTRY CA 91749 ARCHE-TYPE;LUMINAIRE;
 

Where the owner name is not linked, that owner no longer owns the brand

    
Technical Examples
  1. There is provided a semiconductor device in which the thresholds of gate electrodes in transistors can be adjusted together for each of regions having their own functions different from one another. The semiconductor device is provided with: a P-type Si substrate 109; a P-type annular well 181 provided in the element formation surface side of the P-type Si substrate 109; and a N-type annular well 183 provided inside the P-type annular well 181. Moreover, an SRAM-P-type well 185 and an SRAM-N-type well 189 are provided inside the N-type annular well 183. A deep N-type well 133 is provided nearer to the bottom side of the P-type Si substrate 109 than the SRAM-P-type well 185 and the SRAM-N-type well 189. A plurality of P-type wells 103 are provided outside the P-type annular well 181, and a N-type 101 is provided in such a way that the well 101 encloses the outside faces of the P-type wells 103.