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UNEXPOSED FILM or UNEXPOSED FILMS
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Technical Examples
- In one aspect, the invention encompasses a semiconductor processing method. A layer of material is formed over a semiconductive wafer substrate. Some portions of the layer are exposed to energy while other portions are not exposed. The exposure to energy alters physical properties of the exposed portions relative to the unexposed portions. After the portions are exposed, the exposed and unexposed portions of the layer are subjected to common conditions. The common conditions are effective to remove the material and comprise a rate of removal that is influenced by the altered physical properties of the layer. The common conditions remove either the exposed or unexposed portions faster than the other of the exposed and unexposed portions. After the selective removal of the exposed or unexposed portions, and while the other of the exposed and unexposed portions remains over the substrate, the wafer is cut into separated die. In another aspect, the invention encompasses another semiconductor processing method. A layer of (CH3)ySi(OH)4?y is formed over a substrate. Some portions of the layer are exposed to ultraviolet light while other portions are not exposed. The exposure to ultraviolet light converts the exposed portions to (CH3)xSiO2?x. After the exposure to ultraviolet light, the exposed and unexposed portions of the layer are subjected to hydrofluoric acid to selectively remove the (CH3)ySi(OH)4?y of the unexposed portions relative to the (CH3)xSiO2?x of the exposed portions.
- A process for stretching films is described. The process preferably stretches films in a uniaxial fashion. Preferably, optical films are stretched including multilayer optical films. Other aspects of the invention include a roll of stretched film and an apparatus for stretching films.
- The present invention provides methods of imagewise exposing a thermally sensitive composition formed from a nanopaste comprising inorganic nanoparticles, a carrier, and preferably certain polymeric binders. The composition has been applied to a substrate and treated to improve adhesion. Exposure affects the solubility of exposed portions of the applied and treated layer relative to unexposed portions of the applied layer. The imaged layer is then developed on-press with a fountain solution, lithographic ink, or both, to remove the exposed portions or unexposed portions of the layer to form an image in a printing plate.
- SrBi2Nb2O9 (SBN) thin films are deposited on Pt/TiO2/SiO2/Si substrates using off-axis pulsed laser deposition technique. Off-axis laser ablation avoids plasma damaging of the surface of SBN thin films and is favorable to grow films along the polarization axis (a-b plane). SBN thin films are grown at 350° C. substrate temperature, with 5 mm away from the plasma focus, and annealed at 750° C. for 1 hour in oxygen ambient. These SBN thin films exhibited giant remnant polarization (Pr) of 50 ?C/cm
- In a wiring structure of a semiconductor device, dielectric tolerance of the wiring is improved by preventing diffusion of the wiring material. The wiring structure of the semiconductor device includes a first insulating film having plural grooves, plural wiring films formed protrusively above tops of the first insulating film among the grooves, plural barrier films formed on bottoms of the wiring films and up to a position on sides of the wiring films higher than the tops of the first insulating film; first cap films comprising metal films formed on tops of the wiring films, and a second cap film formed on at least respective sides of the first cap films and the barrier films.
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