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SILVER PLATE or SILVER PLATES
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Technical Examples
- A photothermographic material containing, on a substrate, at least a photosensitive silver halide, a non-photosensitive organic silver salt, a reducing agent and a binder in which the total silver iodide content of the photosensitive silver halide is 40 mol % or more and 100 mol % or less, and the coating amount of the photosensitive silver halide, in terms of an amount of silver, is 0.0005 g/m
- A silver halide photographic material, including a support having thereon a silver halide emulsion layer, the silver halide emulsion layer containing silver halide particles having a silver chloride content of more than or equal to 90 mol %, wherein a compound represented by Formula (S) is contained in the interior and on a surface of the silver halide particles and in a binder of the silver halide emulsion layer, and the silver halide particles have more than two silver halide phases therein having different concentration of the compound represented by Formula (S):
- A photocurable silver composition is provided which comprises an ultraviolet light curable organic mixture, a photoinitiator, a silver powder, and a silver flake composition. The silver flake composition comprises at least 20% of the weight of the silver powder. The disclosed compositions may be used to produce silver-containing coatings on a variety of different substrates. Related methods are provided.
- A layered wiring line of silver or silver alloy includes a silver or silver alloy conductor layer including silver or silver alloy; and a protective conductor layer layered on and covering the silver or silver alloy conductor layer. A method for forming the layered wiring line includes steps of: layering the silver or silver alloy conductor layer and the protective conductor layer on a substrate in turn; making the protective conductor layer in contact with a liquid etchant common to the silver or silver alloy conductor layer and the protective conductor layer by a predetermined pattern. The protective conductor layer has a thickness satisfying a relationship in that a ratio of (the protective conductor layer's thickness)/(the silver or silver alloy conductor layer's thickness) is less than that of (a solution velocity of the protective conductor layer in the liquid etchant)/(a solution velocity of the silver or silver alloy conductor layer in the liquid etchant).
- A method for controlling silver doping of a chalcogenide glass in a resistance variable memory element is disclosed herein. The method includes forming a silver layer over a chalcogenide glass layer. Processing the silver layer via heat treating, light irradiation, or a combination of both to form a layer comprising silver interstitially formed in a chalcogenide glass layer; silver-selenide formed in a layer comprising silver interstitially formed in a chalcogenide glass layer; or a silver doped chalcogenide glass layer having silver-selenide formed therein.
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