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DATA BANKS
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Technical Examples
- A dynamic addressing technique mirrors data across multiple banks of a memory resource. Information stored in the memory banks is organized into separately addressable blocks, and memory addresses include a mirror flag. To write information mirrored across two memory banks, a processor issues a single write transaction with the mirror flag asserted. A memory controller detects that the mirror flag is asserted and, in response, waits for both memory banks to become available. At that point, the memory controller causes the write to be performed at both banks. To read data that has been mirrored across two memory banks, the processor issues a read with the mirror flag asserted. The memory controller checks the availability of both banks having the desired information. If either bank is available, the read request is accepted and the desired data is retrieved from the available bank and returned to the processor.
- In an exponentiation device, a relatively large table is generated outside of a coprocessor so as to enable high-speed exponentiation to be performed using the small window method. The selection of data from the table and transfer of data to the coprocessor are conducted in parallel with a multiple-length arithmetic operation performed in the coprocessor. So as to avoid bottlenecks occurring in the data transfer between a CPU and the coprocessor, two data banks are provided in the coprocessor for storing the data to be used in the arithmetic operation. By providing two banks in the coprocessor, it is possible to use one for transferring data while data stored in the other is being used in the arithmetic operation. When the operation using the stored data has been completed, the banks are switched, and the arithmetic operation is then repeated using the newly transferred data while at the same time conducting data transfer in readiness for the following operation.
- A memory device and method receives write data through a unidirectional downstream bus and outputs read data through a unidirectional upstream bus. The downstream bus is coupled to a pair of internal write data buses, and the upstream bus is coupled to a pair of internal read data buses. A first set of multiplexers selectively couple each of the internal write data buses to any of a plurality of banks of memory cells. Similarly, a second set of multiplexers selectively couple each of the banks of memory cells to any of the internal read data buses. Write data can be coupled to one of the banks concurrently with coupling read data from another of the banks. Also, write data may be concurrently coupled from respective write data buses to two different banks, and read data may be concurrently coupled from two different banks to respective read data buses.
- A method of accessing matrix data of a semiconductor memory having memory banks. The memory banks each having memory cells arranged in X and Y directions, a Y decoder for selecting Y-direction addresses of the memory cells and an X decoder for selecting X-direction addresses of the memory cells, predicated on the memory banks being operable independently. Items of data specified by a specified number of continuous X addresses and having the same Y addresses are successively written into or read from the memory cells arranged in the X direction, which are specified by X addresses corresponding to 1+knth in one of the banks. After all data have been written into or read from the specified memory cells, corresponding data are successively written into or read from the memory cells specified by X addresses corresponding to 2+knth in another one of the banks.
- A semiconductor memory device comprising control pads and input/output I/O pads capable of reducing the data path for reading and writing data in a cell array, and a method for driving the semiconductor memory device are included. The semiconductor memory device comprises a plurality of memory banks arranged at a cell region of a memory chip, and a plurality of control pads and a plurality of I/O pads, separately arranged from each other at the memory chip, for reading/writing data from/in the memory banks, wherein the plurality of control pads and I/O pads are dispersed at the peripheral region between adjacent memory banks and at the outer portions of the memory banks.
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