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CONDUCTED LECTURES WITH ASSOCIATED FIELD
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| Brand | Owner |
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| ADVENTURES IN LIFELONG LEARNING | Elderhostel, Inc. |
Technical Examples
- Self-aligned recessed gate structures and method of formation are disclosed. Field oxide area for isolation are first formed in a semiconductor substrate. A plurality of columns are defined in an insulating layer formed over the semiconductor substrate subsequent to which a thin sacrificial oxide layer is formed over exposed regions of the semiconductor substrate but not over the field oxide areas. A dielectric material is then provided on sidewalls of each column and over portions of the sacrificial oxide layer and of the field oxide areas. A first etch is conducted to form a first set of trenches within the semiconductor substrate and a plurality of recesses within the field oxide areas. A second etch is conducted to remove dielectric residue remaining on the sidewalls of the columns and to form a second set of trenches. Polysilicon is then deposited within the second set of trenches and within the recesses to form recessed conductive gates.
- Self-aligned recessed gate structures and method of formation are disclosed. Field oxide areas for isolation are first formed in a semiconductor substrate. A plurality of columns are defined in an insulating layer formed over the semiconductor substrate subsequent to which a thin sacrificial oxide layer is formed over exposed regions of the semiconductor substrate but not over the field oxide areas. A dielectric material is then provided on sidewalls of each column and over portions of the sacrificial oxide layer and of the field oxide areas. A first etch is conducted to form a first set of trenches within the semiconductor substrate and a plurality of recesses within the field oxide areas. A second etch is conducted to remove dielectric residue remaining on the sidewalls of the columns and to form a second set of trenches. Polysilicon is then deposited within the second set of trenches and within the recesses to form recessed conductive gates.
- A plasma jet system includes a housing with an opening. A plasma generator is coupled to ionize a fluid in the housing. An electromagnetic accelerator is coupled to generate an electric field that accelerates ionized fluid in the housing toward the opening. A controller can modulate the frequency of the electric field to cause the ionized fluid to form a plasma vortex flow through the opening. A magnetic field is applied normal to the direction of the plasma vortex flow to mitigate the momentum of the electrons. The electrons slowed by the magnetic field can be collected and conducted to a location where they are re-inserted into the plasma vortex flow to maintain charge neutrality.
- A method for generating a plasma. A gas flows along a flow path having the displacement identical to the lines of magnetic force of the main magnetic field, and high frequency alternating current is applied to the gas, thereby generating a gas plasma. For example, a gas is flowed through a pipe in a first direction. Electricity is conducted through the pipe in substantially the first direction. And a magnetic field is applied along a second direction (e.g., perpendicular to the first direction) to the gas flowing in the pipe such that a plasma is induced in the pipe.
- The present invention relates to a laser beam inspection apparatus for inspecting a defect on a sample such as semiconductor integrated circuits by using a laser beam. The laser beam inspection apparatus irradiates a laser beam to a sample supplied with a constant current or applied by a constant voltage, and then detects indirectly a change in current or a change in electric field corresponding to a change in the value of resistance developed by scanning the laser beam along the surface of the sample. For example, the change in current is conducted indirectly in such a manner that a magnetic field detecting apparatus detects the change in the magnetic field caused by a current flowing the power supply line provided between a constant voltage source and a sample, and whereby it becomes possible to specify the defective area of the sample based on the detection of the change in the magnetic field.
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