848 N. Rainbow Blvd., Suite 5307 Las Vegas NV 89107
PURITY POWER POTENCY;Incense;
Where the owner name is not linked, that owner no longer owns the brand
Technical Examples
A Co silicide layer having a low resistance and a small junction leakage current is formed on the surface of the gate electrode, source and drain of MOSFETs by silicidizing a Co film deposited on a main plane of a wafer by sputtering using a high purity Co target having a Co purity of at least 99.99% and Fe and Ni contents of not greater than 10 ppm, preferably having a Co purity of 99.999%.