PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION

Brand Owner (click to sort) Address Description
BALZERS KAI-1 BALZERS AKTIENGESELLSCHAFT FL-9496 Balzers Liechtenstein plasma enhanced chemical vapor deposition machines (PECVD) for depositing thin film coatings and etching;
BALZERS KAI-10 BALZERS AKTIENGESELLSCHAFT FL-9496 Balzers Liechtenstein plasma enhanced chemical vapor deposition machines (PECVD) for depositing thin film coatings and etching;
BALZERS KAI-20 BALZERS AKTIENGESELLSCHAFT FL-9496 Balzers Liechtenstein plasma enhanced chemical vapor deposition machines (PECVD) for depositing thin film coatings and etching;
BALZERS KAI-5 BALZERS AKTIENGESELLSCHAFT FL-9496 Balzers Liechtenstein plasma enhanced chemical vapor deposition machines (PECVD) for depositing thin film coatings and etching;
CASIDIAM INDUSTRIAL HARD CARBON 771 Crosspoint Drive Denver NC 28037 plasma enhanced chemical vapor deposition services; namely, coating metallic and non-metallic articles with a diamond-like carbon film;
CASIDIAM Casidiam, Inc. 5528 Greyston Street Palm Harbor FL 34685 plasma enhanced chemical vapor deposition services; namely, coating metallic and non-metallic articles with a diamond-like carbon film;
DIALON Nanotech P.O. Box 691240 Charlotte NC 28227 Plasma enhanced chemical vapor deposition process for coating articles and substrates with diamond film;
KAI TEL SOLAR AG Hauptstrasse 1a CH-9477 Trubbach Switzerland plasma enhanced chemical vapor deposition machines (PECVD) for depositing thin film coatings and for etching;
KAI OERLIKON SOLAR AG, TRUEBBACH HAUPTSTRASSE 1A TRUEBBACH 9477 Switzerland plasma enhanced chemical vapor deposition machines (PECVD) for depositing thin film coatings and for etching;
KAI UNAXIS BALZERS AKTIENGESELLSCHAFT FL-9496 BALZERS FURSTENTUM Liechtenstein plasma enhanced chemical vapor deposition machines (PECVD) for depositing thin film coatings and for etching;
 

Where the owner name is not linked, that owner no longer owns the brand

    
Technical Examples
  1. The present invention relates to a bilayer cap structure for interconnect structures that comprise copper metallization or other conductive metallization. Such bilayer cap structure includes a first cap layer formed by an unbiased high density plasma (HDP) chemical vapor deposition process, and a second cap layer over the first cap layer, where the second cap layer is formed by a biased high density plasma (bHDP) chemical vapor deposition process. During the bHDP chemical vapor deposition process, a low AC bias power is applied to the substrate to increase the ion bombardment on the substrate surface and to induce resputtering of the capping material, thereby forming a seamless second cap layer with excellent reactive ion etching (RIE) selectivity.