METAL TREATING ALL

Brand Owner Address Description
PHYWELD APERAM ALLOYS IMPHY Avenue Jean Jaurès IMPHY 58160 France [ Metal treating and all treatment of metal through mechanical, thermomechanical, thermomechanical or chemical transformation of the properties and characteristics of metals, namely, direct reduction of iron, metal tempering, finishing of metal surfaces, brazing, casting, anodizing, chromium plating, sintering, electrolytic zinc plating, phosphatizing, milling, shaping, tin-plating galvanizing, nickel plating, laminating, armor plating, cutting, polishing, magnetizing, plating, cupping, stripping and soldering; recycling of metal goods; treatment of materials during the manufacturing process of metal goods, namely, forging, pressing, deburring, machining, laminating, forming of metals, vacuum treatment and nitriding; custom assembling metal profiles for others; and treatment of materials for use in coppersmithing ];Common metals and their alloys; steel, unwrought or semi-wrought, including stainless steel; non-electric cables and wires of common metal, including soldering wire of metal and barbed wire; [ metal pipes and tubes; ] small metal hardware, namely, [ carabiners, pulleys, ] springs, screws, nails, bolts, [ washers and nuts; metal grates for use in sewers, drains and fireplaces; metal screens, namely, metal furnace screens and metal window screens; metal fences; coated and uncoated wire mesh and wire cloth; ] metal hardware, namely, springs; non-electric machine wires of metal; non-electric drawn wires of metal; and cold-laminated metal strips for industrial soldering applications;
 

Where the owner name is not linked, that owner no longer owns the brand

    
Technical Examples
  1. Forming low contract resistance metal contacts on GaN films by treating a GaN surface using a chlorine gas Inductively Coupled Plasma (ICP) etch process before the metal contacts are formed. Beneficially, the GaN is n-type and doped with Si, while the metal contacts include alternating layers of Ti and Al. Additionally, the GaN film is dipped in a solution of HCl:H2O prior to metal contact formation.